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APTM100A18FTG
Phase leg MOSFET Power Module
VBUS Q1 NT C2
VDSS = 1000V RDSon = 180m typ @ Tj = 25C ID = 43A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS compliant Max ratings 1000 43 33 172 30 210 780 25 50 3000 Unit V A V m W A mJ
G1
S1
OUT Q2
G2
S2 0/VBUS NT C1
G2 S2
OUT
VB US
0/VBUS
OUT
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM100A18FTG- Rev 2
July, 2006
APTM100A18FTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Min
Typ
VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
180 3
Max 200 1000 210 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 43A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5
Min
Typ 10.4 1.76 0.32 372 48 244 18 12 155 40 1800 1246 2846 1558
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 43A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 7.2 19.5
IS = - 43A VR = 670V diS/dt = 200A/s
Max 43 33 1.3 18 320 650
Unit A V V/ns ns C
July, 2006 2-6 APTM100A18FTG- Rev 2
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 43A di/dt 700A/s VR VDSS Tj 150C
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APTM100A18FTG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.16 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTM100A18FTG- Rev 2
July, 2006
APTM100A18FTG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120
VGS =15, 10&8V
Transfert Characteristics 160 140 I D, Drain Current (A) 120 100 80 60 40 20 0 30 0 1 2 3 4 5
T J=25C T J=125C
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
100 80 60 40 20 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
T J=-55C
25
6
7
8
9
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 21.5A VGS=10V
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150
July, 2006
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=20V
20
40
60
80
100
120
ID, Drain Current (A)
TC, Case Temperature (C)
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4-6
APTM100A18FTG- Rev 2
APTM100A18FTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF)
Ciss
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=21.5A
1000
100s
100
limited by R DSon 1ms
10
Single pulse TJ =150C TC=25C 1
10ms
1 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC)
July, 2006
ID=43A TJ =25C
VDS=200V VDS=500V V DS =800V
10000
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM100A18FTG- Rev 2
APTM100A18FTG
Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 10 30 50 70 90 I D, Drain Current (A) Switching Energy vs Current
V DS=670V RG =2.5 T J=125C L=100H
Rise and Fall times vs Current 80
V DS =670V RG =2.5 T J=125C L=100H
t d(off) tr and tf (ns)
tf
60
40 tr 20
t d(on)
0 10 30 50 70 I D, Drain Current (A) 90
Switching Energy vs Gate Resistance
5
Switching Energy (mJ)
7
Switching Energy (mJ)
V DS =670V RG =2.5 T J=125C L=100H
Eon
4 3 2 1 0
6 5 4 3 2 1 0 0
Eoff
VDS=670V ID=43A T J=125C L=100H
Eoff
Eon
Eoff
10
30
50
70
90
5
10
15
20
I D, Drain Current (A) Operating Frequency vs Drain Current I DR, Reverse Drain Current (A)
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
250 200
Frequency (kHz)
ZCS ZVS
1000
100
150 100 50 0 10 15 20 25 30 35 ID, Drain Current (A) 40
VDS=670V D=50% RG=2.5 T J=125C Tc=75C
T J=150C T J=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM100A18FTG- Rev 2

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